| 세션명 | 미래소재: 반데르발스 층상 소재용 전구체 합성 |
|---|---|
| 발표장 | 제6회장 |
| 논문코드 | 1L6-4 |
| 발표일 | 2021-10-21 |
| 발표시간 | 15:15-15:40 |
| 논문제목 | Thickness-dependent electronic structures of PdSe2 and PtSe2 |
| 발표자 | 김용성 |
| 발표자 소속 | 한국표준과학연구원 |
| 저자 | 김용성† |
| 소속 | 한국표준과학연구원 |
| 논문초록 | Narrow bandgap two-dimensional semiconductor has attracted great attention recently due to its infrared optoelectronic application. We investigate thickness-dependent electronic structures of noble transition metal dichalcogenides: PdSe2 and PtSe2 through density-functional theory calculations. While the monolayer PdSe2 is a semiconductor with a bandgap of about 1.2 eV, it has been controversial if the bulk PdSe2 is a semi-metal or a narrow bandgap semiconductor. Our investigation shows that the bulk PdSe2 is not a semi-metal but has a bandgap of about 0.5 eV. The monolayer PtSe2 has a bandgap of about 1.2 eV, and the bulk PtSe2 is a well-known semi-metal. The evolution of bandgap of PtSe2 with thickness has been a controversial issue. Some report that PtSe2 thicker than tri-layer is semi-metallic, while some show that even few-tens-nm-thick PtSe2 is a narrow bandgap semiconductor. Our result shows that the bandgap of PtSe2 converges to zero very slowly with increasing the thickness. |
THE POLYMER SOCIETY OF KOREA